An experimental 80-ns 1-Mbit DRAM with fast page operation

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Abstract
An experimental general purpose 5-V 1-Mb dynamic RAM has been designed for increased performance, high density, and enhanced reliability. The array consists of a one-device overlapped I/O cell with a metal bitline architecture. The cell measures 4.1 /spl mu/m by 8.8 /spl mu/m, which yields a chip size of 5.5 mm by 10.5 mm with an array to chip area ratio of 65.5%. The chip was designed in a double-poly single-metal NMOS technology with selected 1-/spl mu/m levels and an average feature size of 1.5 /spl mu/m. Key design features include a fast page mode cycle with minimum column precharge delay and improved protection for short error rate using a boosted word-line after sense amplifier set scheme. The CAS access time is 40 ns and the cycle is 65 ns at 4.5 V and 85/spl deg/C. The RAS access time is 80 ns and the cycle is 160 ns at 4.5 V and 85/spl deg/C with a typical active power of 625 mW. The chip is usable as a X1, X2, or X4 with the use of block select inputs and the selected package option. The package options include a 500-mil/SUP 2/ pin grid array module with 23 pins, and a 22 pin or 26 pin 300-mil surface solder plastic package.

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