Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (8) , 1286-1290
- https://doi.org/10.1109/16.506781
Abstract
No abstract availableKeywords
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