Current-acceleration for rapid time-to-failure determination of bipolar junction transistors under emitter-base reverse-bias stress

This publication has 5 references indexed in Scilit:

• Two pathways of positive oxide-charge buildup during electron tunneling into silicon dioxide film
  Journal of Applied Physics, 1994
• Hot carrier induced HFE degradation in BiCMOS transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1992
• Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design
  IEEE Transactions on Electron Devices, 1988
• Inherent and stress-induced leakage in heavily doped silicon junctions
  IEEE Transactions on Electron Devices, 1988
• Modeling hot-carrier effects in polysilicon emitter bipolar transistors
  IEEE Transactions on Electron Devices, 1988