Low-Energy Double-Ion-Beam Deposition System
- 1 January 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (1R)
- https://doi.org/10.1143/jjap.27.140
Abstract
A low-energy double-ion-beam deposition system for high-quality thin-dielectric-film formation has been developed. The system consists of two beam lines (a mental ion beam line and a gas ion beam line) and has a new type of ion-beam deceleration electrodes which can be moved like a folding screen. In this system, decelerated Ta+ and oxygen ion beams of about 80 and 180 µA/cm2, respectively, were obtained in a final-energy range of 100∼200 eV. In a deposition test, by simultaneously irradiating with a mass-separated Ta+ ion beam and an oxygen ion beam, pure and soichiometric Ta2O5 films of 50 nm thickness were obtained in one hour at room temperature.Keywords
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