The theory of laser annealing of disordered semiconductors
- 10 November 1980
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 80 (1) , 91-95
- https://doi.org/10.1016/0375-9601(80)90464-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Reasons to believe pulsed laser annealing of Si does not involve simple thermal meltingPhysics Letters A, 1979
- Nonthermal pulsed laser annealing of Si; plasma annealingPhysics Letters A, 1979
- Electron liquid in collective description. III. Positron annihilationAnnals of Physics, 1979
- Calculation of the dynamics of surface melting during laser annealingApplied Physics Letters, 1979
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978
- Some features of laser annealing of implanted silicon layersRadiation Effects, 1978
- Surface structure changes by laser pulses in siliconPhysics Letters A, 1977
- Light-induced transmittance oscillation in GeSe2 thin filmsSolid State Communications, 1977
- Theory of electron gas as a system of interacting collective excitations I. Boson formalismAnnals of Physics, 1975
- ``Stopping effect'' on guided light in As–S films by a laser beamApplied Physics Letters, 1974