In-Situ Studies of the Formation Sequence of Silicides During Vacuum (10-7 TORR)Thermal Annealing of TI/Polysilicon Bilayers
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Comparison of cobalt and titanium silicides for SALICIDE process and shallow junction formationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Simultaneous occurrence of multiphases in interfacial reactions of ultrahigh vacuum deposited Ti thin films on (111)SiApplied Physics Letters, 1991
- Interface microstructure of titanium thin-film/silicon single-crystal substrate correlated with electrical barrier heightsJournal of Applied Physics, 1991
- A comparison of the reaction of titanium with amorphous and monocrystalline siliconJournal of Applied Physics, 1990
- TiSi2 Thin Films Formed on Crystalline and Amorphous SiliconMRS Proceedings, 1990
- Kinetic and Thermodynamic Aspects of Phase Evolution in Ti/a-Si Multilayer FilmsMRS Proceedings, 1990
- Oxygen behavior during titanium silicide formation by rapid thermal annealingJournal of Applied Physics, 1987
- Lattice imaging of metastable TiSi2Journal of Applied Physics, 1987
- Titanium disilicide formation on heavily doped silicon substratesJournal of Applied Physics, 1987
- Amorphous Ti-Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayersJournal of Applied Physics, 1987