Surface chemkin: A general formalism and software for analyzing heterogeneous chemical kinetics at a gas‐surface interface
- 1 December 1991
- journal article
- research article
- Published by Wiley in International Journal of Chemical Kinetics
- Vol. 23 (12) , 1111-1128
- https://doi.org/10.1002/kin.550231205
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Si Deposition Rates in a Two‐Dimensional CVD Reactor and Comparisons with Model CalculationsJournal of the Electrochemical Society, 1990
- The influence of reactor pressure on rate-limiting factors and reaction pathways in MOVPE of GaAsJournal of Crystal Growth, 1989
- The role of hydrogen in vapor deposition of diamondJournal of Applied Physics, 1989
- Chemical Kinetic Analysis on the Growth Mechanism of Diamondlike Films from a CH3OH–H2MixtureJapanese Journal of Applied Physics, 1989
- On the role of oxygen and hydrogen in diamond-forming dischargesJournal of Applied Physics, 1989
- A Mathematical Model of the Fluid Mechanics and Gas‐Phase Chemistry in a Rotating Disk Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1989
- Electron and chemical kinetics in methane rf glow-discharge deposition plasmasJournal of Applied Physics, 1989
- Elementary processes and rate-limiting factors in MOVPE of GaAsJournal of Crystal Growth, 1988
- A Mathematical Model of Silicon Chemical Vapor Deposition: Further Refinements and the Effects of Thermal DiffusionJournal of the Electrochemical Society, 1986
- A Mathematical Model of the Coupled Fluid Mechanics and Chemical Kinetics in a Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1984