Improvements of electrical and optical properties of InAlAs grown by molecular beam epitaxy
- 15 October 1985
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (8) , 3262-3264
- https://doi.org/10.1063/1.335785
Abstract
Great improvement in the electrical and optical properties of molecular‐beam‐epitaxy‐grown InAlAs was obtained by using InP buffer layers and high substrate temperatures of 555 °C. Undoped InAlAs layers are n type and the highest room temperature electron mobility is as high as 5100 cm2/V s with a carrier concentration of 1×1015 cm−3. The room‐temperature photoluminescence spectrum has a sharp edge emission with a spectral half‐width as narrow as 42 meV.This publication has 15 references indexed in Scilit:
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