Photoluminescence of AlGaAs:Ge and GaAs:Ge and Sn grown by liquid-phase epitaxy
- 15 April 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (8) , 2896-2899
- https://doi.org/10.1063/1.335227
Abstract
The photoluminescence of Ge-doped AlxGa1−xAs and Sn-doped GaAs were investigated at 1.4 K. The ionization energy of Ge is strongly dependent on the Al composition in AlGaAs, and is in very poor agreement with the effective mass value. The ionization energy of Sn was found to be 110 meV in contrast with previously reported values. We also report a Sn acceptor bound excitation line at 1.507 eV in Sn-doped GaAs, and a broad luminescence band peaking at ∼1.5 eV in Ge-doped AlGaAs.This publication has 11 references indexed in Scilit:
- Open tube diffusion of Zn into AlGaAs and GaAsJournal of Applied Physics, 1983
- Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxyJournal of Applied Physics, 1982
- Photoluminescence spectrum of p-type AlxGa1−xAs:GeJournal of Applied Physics, 1982
- Photoluminescence measurements in Ge-doped p-type Ga0.60Al0.40AsJournal of Applied Physics, 1981
- Photoluminescence of Ge-doped AlxGa1−xAs grown by liquid phase epitaxyJournal of Applied Physics, 1980
- Piezospectroscopic and magneto-optical study of the Sn-acceptor in GaAsPhysical Review B, 1976
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Strongly quenched deformation potentials of the Mn acceptor in GaAsPhysical Review B, 1974
- Photolumineszenz-spektrum des Sn-Akzeptors in GaAsSolid State Communications, 1970
- Bound exciton luminescence in epitaxial Sn-doped gallium-arsenideJournal of Luminescence, 1970