Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- 1 March 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (3B) , L296
- https://doi.org/10.1143/jjap.31.l296
Abstract
X-ray diffraction analysis has clarified structural features of heavily carbon-doped GaAs films grown by metalorganic molecular beam epitaxy (MOMBE). X-ray quasi-forbidden reflection (XFR) intensity measurements have provided direct evidence that almost all the doped C atoms occupy As sites and cause large displacements of the nearest-neighbouring Ga and the second-nearest-neighbouring As atoms. X-ray rocking curve analysis has also shown that large lattice strain remains unrelaxed even for an epilayer far thicker than the critical thickness, although a high density of misfit dislocations has been observed by X-ray topography.Keywords
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