Amphoteric native defects in semiconductors
- 22 May 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (21) , 2094-2096
- https://doi.org/10.1063/1.101174
Abstract
We show that a new concept of amphoteric native defects with strongly Fermi level dependent defect formation energy provides the basis for a unified explanation of a large variety of phenomena in semiconductors. Formation of Schottky barriers, particle irradiation induced compensation, doping-induced superlattice intermixing, and limits of free-carrier concentration find for the first time a common simple explanation.Keywords
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