Effect of rapid thermal annealing for the compositional disordering of Si-implanted AlGaAs/GaAs superlattices
- 2 March 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (9) , 519-521
- https://doi.org/10.1063/1.98145
Abstract
We have investigated the effect of rapid thermal annealing (RTA) for the compositional disordering of Si-implanted AlGaAs/GaAs superlattices (SL) in comparison with that of furnace annealing (FA). By using RTA (970 °C, 10 s), the implantation damage can be eliminated without disordering the SL, while the disordering occurs when FA (850 °C, 30 min) is used. Secondary ion mass spectrometry analyses show that the difference between RTA and FA is due to the extent of Si diffusion into the AlGaAs/GaAs SL.Keywords
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