Influence of gallium sources on carbon incorporation efficiency into InGaAs grown by metalorganic chemical vapor deposition
- 1 August 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 165 (3) , 215-221
- https://doi.org/10.1016/0022-0248(96)00174-1
Abstract
No abstract availableKeywords
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