Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 274-279
- https://doi.org/10.1016/0022-0248(91)90984-d
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Heterostructure bipolar transistor employing carbon-doped base grown with trimethyl-Ga and arsineElectronics Letters, 1990
- Chemical beam epitaxial growth of strained carbon-doped GaAsApplied Physics Letters, 1990
- Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxyApplied Physics Letters, 1990
- Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxyApplied Physics Letters, 1989
- Carbon diffusion in undoped, n-type, and p-type GaAsApplied Physics Letters, 1989
- Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachlorideApplied Physics Letters, 1989
- Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filamentApplied Physics Letters, 1988
- Controlled carbon doping of GaAs by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium SourcesJapanese Journal of Applied Physics, 1985