In situ analysis of irradiation-induced crystal nucleation in amorphous silicon: a “microscope” for thermodynamic processes in nucleation
- 1 January 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 973-977
- https://doi.org/10.1016/0168-583x(93)90718-l
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Ion-Assisted Nucleation in Amorphous Silicon: Ion Mass and Dose Rate EffectsEurophysics Letters, 1991
- Kinetic and thermodynamic enhancement of crystal nucleation and growth rates in amorphous Si film during ion irradiationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Ion irradiation enhanced crystal nucleation in amorphous Si thin filmsApplied Physics Letters, 1990
- Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in siliconJournal of Materials Research, 1988
- A defect model for ion-induced crystallization and amorphizationJournal of Materials Research, 1988
- Kinetics of solid phase crystallization in amorphous siliconMaterials Science Reports, 1988
- Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parametersJournal of Applied Physics, 1987
- The HVEM-Tandem Accelerator Facility at Argonne National LaboratoryNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Transient nucleation in condensed systemsThe Journal of Chemical Physics, 1983
- Solution of the non-steady state problem in nucleation kineticsSurface Science, 1969