Hot electron capture in GaAs MQW: NDR and persistent effects
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 799-803
- https://doi.org/10.1016/0038-1101(88)90392-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Investigation of intrinsic and extrinsic photoluminescence in MQWSuperlattices and Microstructures, 1986
- Photo-luminescence studies of hot electrons and real space transfer effect in a double quantum well superlatticeSuperlattices and Microstructures, 1986
- Free and bound excitons in p-type GaAs MQWSemiconductor Science and Technology, 1986
- Spectroscopy of hot carriers in semiconductorsJournal of Luminescence, 1986
- Monte Carlo simulation of scattering-induced negative differential resistance in AlGaAs/GaAs quantum wellsJournal of Physics C: Solid State Physics, 1986
- Novel real-space hot-electron transfer devicesIEEE Electron Device Letters, 1983
- The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structuresJournal of Physics C: Solid State Physics, 1982
- Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1−xAs heterojunction layersApplied Physics Letters, 1981
- Theory of High Field Conduction in a DielectricJournal of Applied Physics, 1969
- A bulk differential negative resistance due to electron tunnelling through an impurity potential barrierPhysics Letters, 1963