Raman scattering from ion-implanted silicon
- 15 November 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (10) , 6688-6691
- https://doi.org/10.1103/physrevb.32.6688
Abstract
Raman spectroscopy has been used to study structural disorder in silicon implanted with phosphorus and boron ions. Line-shape asymmetry of the one-phonon mode and the oscillator strength of the two-phonon combination spectra are used to characterize the disorder. This analysis permits a rough identification of the threshold for formation of microcrystallites embedded in an amorphous continuum.Keywords
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