Monte Carlo simulation of depth and lateral profiles of boron atoms implanted in polycrystalline silicon
- 1 April 1977
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (4) , 1745-1747
- https://doi.org/10.1063/1.323821
Abstract
A Monte Carlo calculation technique has been applied to ion implantation. The theory was compared with both the depth distribution of 150-keV boron implanted in silicon, measured with a secondary-ion mass spectrometer (Hitachi IMA-2) and an Auger electron spectrometer (PHI model 5000), and the lateral spread of the implanted boron, measured by Akasaka et al. The results indicate that the theory describes the three-dimensional distribution of boron implanted in polycrystalline silicon at 150 keV with considerable success.This publication has 11 references indexed in Scilit:
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