Near-Field Magnetophotoluminescence Spectroscopy of Composition Fluctuations in InGaAsN
- 10 December 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 87 (27) , 277401
- https://doi.org/10.1103/physrevlett.87.277401
Abstract
The localization of excitons on quantum-dot-like compositional fluctuations has been observed in temperature-dependent near-field magnetophotoluminescence spectra of InGaAsN. Localization is driven by the giant bowing parameter of these alloys and manifests itself by the appearance of ultranarrow lines (half-width ) at temperatures below 70 K. We show how near-field optical scanning microscopy can be used for the estimation of the size, density, and nitrogen excess of individual compositional fluctuations (clusters), thus revealing random versus phase-separation effects in the distribution of nitrogen.
Keywords
This publication has 25 references indexed in Scilit:
- Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopyApplied Physics Letters, 2001
- Photoluminescence-linewidth-derived reduced exciton mass for alloysPhysical Review B, 2000
- Time-resolved photoluminescence studies of InxGa1−xAs1−yNyApplied Physics Letters, 2000
- Photocurrent of 1eV GaInNAs lattice-matched to GaAsJournal of Crystal Growth, 1998
- Local probe techniques for luminescence studies of low-dimensional semiconductor structuresJournal of Applied Physics, 1998
- Luminescence of as-grown and thermally annealed GaAsN/GaAsApplied Physics Letters, 1998
- Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN AlloysPhysical Review Letters, 1996
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and BoronJapanese Journal of Applied Physics, 1993
- Photoluminescent properties and optical absorption of AlAs/GaAs disordered superlatticesJournal of Applied Physics, 1990
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967