Initial growth layers and critical thickness of InAs heteroepitaxy on GaAs substrates
- 1 March 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 160 (1-2) , 27-35
- https://doi.org/10.1016/0022-0248(95)00472-6
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Island formation of InAs grown on GaAsJournal of Crystal Growth, 1995
- Defect control during growth of highly mismatched (100) InAsGaAs-heterostructuresJournal of Crystal Growth, 1995
- Initial growth stage and optical properties of a three-dimensional InAs structure on GaAsJournal of Applied Physics, 1994
- Breakdown of continuum elasticity theory in the limit of monatomic filmsPhysical Review Letters, 1992
- Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs SurfacesJapanese Journal of Applied Physics, 1991
- Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxyPhysical Review B, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Rheed and x-ray characterization of InGaAs/GaAs grown by MBEJournal of Crystal Growth, 1989
- Summary Abstract: The influence of molecular beam epitaxy growth conditions on the Ga–Al–In–As ternary and quaternary systemsJournal of Vacuum Science & Technology B, 1986
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970