INTERACTION OF LITHIUM WITH IMPURITIES AND DEFECTS IN SILICON
- 15 November 1966
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (10) , 364-366
- https://doi.org/10.1063/1.1754614
Abstract
Defects in silicon p‐on‐n solar cells with a lithium‐diffused n region, produced by electron irradiation and spontaneously annealed at room temperature, are interpreted as lithium atoms.Keywords
This publication has 4 references indexed in Scilit:
- LITHIUM-DOPED, RADIATION-RESISTANT SILICON SOLAR CELLSApplied Physics Letters, 1966
- Annealing of radiation induced defects in siliconPhysics Letters, 1966
- Low-Temperature Annealing Studies in GeJournal of Applied Physics, 1959
- Chemical Interactions Among Defects in Germanium and SiliconBell System Technical Journal, 1956