Annealing of radiation induced defects in silicon
- 1 March 1966
- journal article
- Published by Elsevier in Physics Letters
- Vol. 20 (4) , 343-344
- https://doi.org/10.1016/0031-9163(66)90730-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Temperature dependence of radiation damage in siliconPhysics Letters, 1966
- Spin-1 Centers in Neutron-Irradiated SiliconPhysical Review B, 1963
- Electron Spin Resonance in Neutron-Irradiated SiliconPhysical Review B, 1962