In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy
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- 14 April 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (15) , 2401-2403
- https://doi.org/10.1063/1.1566799
Abstract
The effect of growth conditions on the morphological properties of InAs/GaAs(001) quantum dots covered by a thin (<3 nm) GaAs cap has been studied by atomic force microscopy. Each dot turns into an elongated nanostructure at 540 °C upon deposition of the cap in As 4 atmosphere, while structures with two humps are obtained when capping at 500 °C. The use of As 2 atmosphere instead of As 4 at 500 °C leads to the formation of quantum rings. Photoluminescence spectroscopy and polarization photoluminescence (PL) at 15 K show dramatic changes due to the different kinds of confinement. This allows the possibility of tailoring PL emission by controlling the size and shape.Keywords
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