Growth process of III–V compound semiconductors by migration-enhanced epitaxy
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4) , 326-338
- https://doi.org/10.1016/0022-0248(90)90382-u
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- I n s i t u observation of molecular beam epitaxy of GaAs and AlGaAs under deficient As4 flux by scanning reflection electron microscopyApplied Physics Letters, 1989
- The meandering of steps on GaAs(100)Journal of Crystal Growth, 1989
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation EpitaxyJapanese Journal of Applied Physics, 1989
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- Epitaxial Growth Mechanism of the (100) As Surface of GaAs–The Effect of Positive Holes–Japanese Journal of Applied Physics, 1988
- Photoluminescence characteristics of AlGaAs-GaAs single quantum wells grown by migration-enhanced epitaxy at 300 °C substrate temperatureApplied Physics Letters, 1987
- Phase-locked RHEED oscillations during MBE growth of GaAs and AlxGa1−xAsJournal of Crystal Growth, 1987
- Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBEJournal of Crystal Growth, 1987
- Anisotropic lateral growth in GaAs MOCVD layers on (001) substratesJournal of Crystal Growth, 1987
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986