NiSi formation at the silicide/Si interface on the NiPt/Si system
- 1 July 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7) , 4903-4906
- https://doi.org/10.1063/1.331323
Abstract
Alloy films of NiPt were e‐beam codeposited on n‐type Si and annealed up to 700 °C in a purified‐ He ambient furnace. Silicide formation was monitored using MeV4 He Rutherford backscattering and glancing‐angle x‐ray diffraction. At low temperatures (300–350 °C), Ni segregates at the Si/ silicide interface and the first phases detected are NiSi and PtSi. At intermediate temperatures (400– 500 °C), there is further accumulation of Ni at the Si/silicide interface, and at later stages an incursion of Pt to the interface. The barrier height increase reflects the presence of Pt. At 700 °C, the Ni and Pt redistribute to form a uniform ternary.This publication has 10 references indexed in Scilit:
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