80 GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (0149645X) , 529-532
- https://doi.org/10.1109/mwsym.1998.705048
Abstract
We report distributed amplifiers with 80 GHz bandwidth, 6.7 dB gain and /spl sim/70 GHz bandwidth, 7.7 dB gain. These amplifiers were fabricated in the transferred-substrate heterojunction bipolar transistor integrated circuit technology. Transferred-substrate HBTs have very high f/sub max/ (>400 GHz) and have yielded distributed amplifiers with record gain-bandwidth product.Keywords
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