A 1-157 GHz InP HEMT traveling-wave amplifier
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10972633,p. 21-23
- https://doi.org/10.1109/rfic.1998.682039
Abstract
We report traveling wave amplifiers with 1-157 GHz 3-dB bandwidth, 5 dB gain. These amplifiers were fabricated in a 0.1 /spl mu/m gate length InGaAs/InAlAs HEMT MMIC technology. The use of gate-line capacitive-division and low-loss elevated coplanar waveguide lines have yielded record bandwidth broadband amplifiers.Keywords
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