An evaporated aluminum metallization for high efficiency GaAs solar cells
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 115-118 vol.1
- https://doi.org/10.1109/pvsc.1990.111602
Abstract
A thick aluminum grid metallization for p-n GaAs solar cells which can be deposited completely by evaporation has been developed. The contacts are weldable, have low specific contact resistance (5*10/sup -6/ Omega -cm/sup 2/) to p-GaAs, and are compatible with the subsequent processing steps used on a GaAs solar cell pilot line. The total metallization is approximately 4 mu m thick with nearly vertical sidewalls, and height-to-width aspect ratios greater than one can be achieved. This cross-sectional geometry provides sufficient current-carrying capacity with minimum obscuration. Large-area (4 cm/sup 2/) devices have been fabricated with this aluminum metal scheme, resulting in a median efficiency of 20.52% (one sun, AM0). Fabrication details, test results for large-area cells, and applications for high-temperature stability, and concentrator cells are discussed.Keywords
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