A semi-numerical model for multi-emitter finger AlGaAs/GaAs HBTs
- 30 November 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (11) , 1825-1832
- https://doi.org/10.1016/0038-1101(94)90173-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Theoretical calculations of temperature and current profiles in multi-finger heterojunction bipolar transistorsSolid-State Electronics, 1993
- A physics-based, analytical heterojunction bipolar transistor model, including thermal and high-current effectsIEEE Transactions on Electron Devices, 1993
- Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulationIEEE Transactions on Electron Devices, 1993
- A study of current transport in p-N heterojunctionsSolid-State Electronics, 1992
- Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1991
- Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speedIEEE Transactions on Electron Devices, 1987
- Thermal resistance of heat sinks with temperature-dependent conductivitySolid-State Electronics, 1975
- Thermal conductivity of silicon, germanium, III–V compounds and III–V alloysSolid-State Electronics, 1967