Molecular Beam Epitaxy of InP Using Low Energy P+ Ion Beam
- 1 February 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (2A) , L115-118
- https://doi.org/10.1143/jjap.24.l115
Abstract
A new film growth technique of III-V compound semiconductors is developed where the sticking coefficient of the group V element can be increased by implanting mass separated, high purity group V ion at low energy. Using this growth technique, the epitaxial growth of InP on (100)InP substrate is studied. Single crystal films are grown between 210°C and 420°C at the P+ ion energy of 200 eV and with the flux intensities of In molecular beam and P+ ion beam of 1.5×1013 cm-2·s-1 and 3.0×1013 cm-2·s-1, respectively. The films grown between 300°C and 420°C show sharp 2×4 structure in the RHEED pattern as in the case of MBE, and also show well defined features due to bound excitons and donor-acceptor pairs in the photoluminescence spectra at 4.2 K.Keywords
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