High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
Top Cited Papers
- 6 September 2002
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 297 (5587) , 1670-1672
- https://doi.org/10.1126/science.1074374
Abstract
Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p - i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.Keywords
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