The tin-vacancy pair defect in silicon
- 1 June 1981
- journal article
- Published by Springer Nature in Hyperfine Interactions
- Vol. 10 (1-4) , 751-757
- https://doi.org/10.1007/bf01022005
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Radiation defects in ion-implanted silicon. I. Mössbauer spectroscopy ofdefect structures from implantations of radioactive antimonyPhysical Review B, 1980
- Lattice dynamics of substitutionalin silicon, germanium, and-tinPhysical Review B, 1980
- Mössbauer Study of a Complex 119Sn Impurity‐Defect in Gallium PhosphidePhysica Status Solidi (b), 1980
- Mossbauer study of a complex Sn impurity defect in GaAs from implantations of radioactive119In ionsJournal of Physics C: Solid State Physics, 1980
- Mossbauer study of Sn impurity defect structures in GaAsJournal of Physics C: Solid State Physics, 1980
- Displacement of impurities in Si by irradiation with energetic H+or He+particlesRadiation Effects, 1979
- Mössbauer study of119Sn defects in silicon from ion implantations of radioactive119InHyperfine Interactions, 1979
- Defects in irradiated silicon: EPR of the tin-vacancy pairPhysical Review B, 1975
- Covalency effects on implanted119Sn in group IV semiconductors studied by Mössbauer and channeling experimentsHyperfine Interactions, 1975
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy PairsPhysical Review B, 1968