The density of localized states at the semi-insulating polycrystalline and single-crystal silicon interface
- 15 November 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (10) , 3599-3604
- https://doi.org/10.1063/1.337565
Abstract
The density of localized states at the interface between as-deposited 51 at. % semi-insulating polycrystalline silicon and silicon has been measured using the conductance technique. Aluminum-gated metal-insulator-semiconductor structures were made on n-n+ and p-p+ epilayered silicon and full details of capacitance-voltage and conductance-voltage characteristics are given. The interface state response is shown to fit the statistical model and comparisons with the Si-SiO2 interface were made. The density of states is found to be between ∼6×1010 cm−2 eV−1 near midgap rising to ∼6×1011 cm−2 eV−1 at the band edges.This publication has 27 references indexed in Scilit:
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