Active to passive transition in the oxidation of SiC
- 1 June 1971
- journal article
- Published by Elsevier in Corrosion Science
- Vol. 11 (6) , 337-342
- https://doi.org/10.1016/s0010-938x(71)80116-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- High-temperature kinetics of the oxidation and nitridation of pyrolytic silicon carbide in dissociated gasesThe Journal of Physical Chemistry, 1970
- SiO2+SiC reaction at elevated temperatures. Part 1.—Kinetics and mechanismTransactions of the Faraday Society, 1966
- The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10[sup ?3] to 5 × 10[sup ?1] Torr Oxygen PressureJournal of the Electrochemical Society, 1966
- SiO2+SiC reaction at elevated temperatures. Part 2.—Effect of added gasesTransactions of the Faraday Society, 1966
- Passivity during the Oxidation of Silicon at Elevated TemperaturesJournal of Applied Physics, 1958