On The Formation of Si Oxide by Ion Implantation
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- Formation of buried insulating layers in silicon by the implantation of high doses of oxygenNuclear Instruments and Methods in Physics Research, 1983
- A Review of Silicon-On-Insulator Formation by Oxygen Ion ImplantationMRS Proceedings, 1983
- Thermal annealing behavior of an oxide layer under siliconApplied Physics Letters, 1982
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- Oxidation of siliconPhilosophical Magazine A, 1982
- Oxidant transport during steam oxidation of siliconApplied Physics Letters, 1981
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