Selective plasma etching of Ge substrates for thin freestanding GaAs-AlGaAs heterostructures
- 21 October 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (17) , 2153-2155
- https://doi.org/10.1063/1.106110
Abstract
Selective plasma etching of Ge with a CF4/O2 mixture is used to produce freestanding GaAs-AlGaAs thin films. The etch rate of Ge substrates is as high as 150 μm/h at temperatures of 75 °C under optimized conditions and with a negligible etch rate for GaAs and AlGaAs materials. This plasma etching technique, combined with a lattice-matched growth of GaAs-AlGaAs structures on Ge substrates, has a variety of potential device applications. The characteristics of this etch process and the photoluminescence of freestanding AlGaAs-GaAs structures are presented.Keywords
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