Plasma-etch technology
- 1 July 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Circuits and Devices Magazine
- Vol. 6 (4) , 38-43
- https://doi.org/10.1109/101.59429
Abstract
An overview is given of plasma-etch processes used in microelectronics fabrication for pattern transfer, and the main requirements for plasma-assisted etching are outlined. The two primary etch mechanisms-chemical and physical-are examined. Issues involved in bringing plasma processes to the factory are discussed. Monitoring and controlling plasma processes are considered.Keywords
This publication has 4 references indexed in Scilit:
- Plasma processing in microelectronics manufacturingAIChE Journal, 1989
- Photoemission optogalvanic spectroscopy: An i n s i t u method for plasma electrode surface characterizationJournal of Applied Physics, 1988
- Plasma etching of III-V compound semiconductorsJournal of Vacuum Science & Technology A, 1983
- Plasma-assisted etchingPlasma Chemistry and Plasma Processing, 1982