Damage and Its Rapid Thermal Annealing Behavior of 1 MeV Ar+-Ion-Implanted Silicon
- 1 February 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (2R)
- https://doi.org/10.1143/jjap.33.1109
Abstract
The formation of the buried amorphous layer and its annealing behavior during rapid thermal annealing in 1 MeV Ar+-implanted (100) silicon at a dose of 1×1015 cm-2 have been investigated by cross-sectional transmission electron microscopy. Rutherford backscattering spectroscopy and the thermal-wave-modulated optical reflectance technique. The buried amorphous layer is completely recovered, but forms a closure dislocation at 675°C. The regrowth rate of solid phase epitaxy from the upper (closer to the surface) amorphous/crystalline (a/c) interface is found to be higher than that from the lower (in the bulk) a/c interface. Closure dislocations coalesce into V-shaped dislocations which are observed mainly in the upper regrown region and evolve into extended defects such as the dislocation loops and lines at higher temperature. However, they persist with the end-of-range dislocations even at the temperature of 1100°C.Keywords
This publication has 19 references indexed in Scilit:
- Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantationApplied Physics Letters, 1990
- Damage formation and annealing of high energy ion implantation in SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Damage nucleation and annealing in MeV ion-implanted SiApplied Physics Letters, 1988
- On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized siliconJournal of Applied Physics, 1988
- Proximity gettering with mega-electron-volt carbon and oxygen implantationsApplied Physics Letters, 1988
- Damage annealing behavior of 3 MeV Si+-implanted siliconApplied Physics Letters, 1987
- MeV-energy B+, P+ and As+ ion implantation into SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Defect Structures and Electrical Behavior of Rapid Thermally Annealed Ion Implanted SiliconMRS Proceedings, 1987
- Extended Defects in Amorphized and Rapid-Thermally Annealed SiliconMRS Proceedings, 1985
- Some observations on the amorphous to crystalline transformation in siliconJournal of Applied Physics, 1982