On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon
- 15 July 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (2) , 666-676
- https://doi.org/10.1063/1.341959
Abstract
We have studied the solid phase epitaxial regrowth (SPER) of implantation [31P+,11B+(73Ge+ preamorphized)] amorphized silicon in the temperature range 500–600 °C induced by rapid thermal annealing (RTA), using Rutherford backscattering (RBS) and channeling measurements. Our results show rate enhancements (≂3.5–6.5) of the velocities of regrowth in all cases studied with respect to values reported in the literature for furnace-induced epitaxy. The measured SPER activation energies (2.7 and 2.6 eV for 31P+ and 11B+ implantations, respectively) while being comparable to literature reported values, were nevertheless higher than the energy required for the activation of these dopants, ≂1.55–2.45 eV. Also, the ratio VB/VP (velocity of regrowth in the presence of boron with respect to phosphorus) gives a value of approximately 3 in both RTA and furnace-induced kinetics. These results are explained by a model which takes into account the role of electrically active interfacial defect sites during SPER.This publication has 33 references indexed in Scilit:
- Thermal and plasma models of pulsed heating of thin filmsVacuum, 1986
- RF annealing of the implantation-induced defects in silicon using hydrogen plasmaPhysica Status Solidi (a), 1984
- Formation of semiconductor epitaxial films by pulse heating crystallization or regrowthPhysica Status Solidi (a), 1983
- Solid-Phase-Epitaxial Growth in Ion-Implanted SiliconPhysica Status Solidi (a), 1982
- Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous SiJournal of Applied Physics, 1982
- Compensating impurity effect on epitaxial regrowth rate of amorphized SiApplied Physics Letters, 1982
- Hydrogen passivation of point defects in siliconApplied Physics Letters, 1980
- Electronic effects on dislocation velocities in heavily doped siliconPhysical Review B, 1976
- Self‐ and impurity diffusion in Ge and SiPhysica Status Solidi (b), 1975
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970