RF annealing of the implantation-induced defects in silicon using hydrogen plasma
- 16 May 1984
- journal article
- device related-phenomena
- Published by Wiley in Physica Status Solidi (a)
- Vol. 83 (1) , 411-417
- https://doi.org/10.1002/pssa.2210830147
Abstract
No abstract availableKeywords
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