Hydrogen passivation of laser-induced defects in germanium
- 1 January 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (1) , 440-441
- https://doi.org/10.1063/1.331678
Abstract
The passivation by hydrogen of acceptor level defects (Ev +0.17 eV, Ev +0.36 eV) caused by the laser irradiation of single crystal n-type Ge (ND −NA =1.5×1016 cm−3) has been observed using deep level transient spectroscopy. The point defects are neutralized by a 10-min exposure to atomic hydrogen at 150 °C; using conventional thermal annealing, a 2-h heat treatment in H2 at 280 °C is required to produce the same effect.This publication has 10 references indexed in Scilit:
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