Removal of radiation-induced electron traps in MOS structures by rf annealing
- 1 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1) , 81-84
- https://doi.org/10.1063/1.91283
Abstract
Rf annealing technique has been successfully applied to remove the radiation‐induced electron traps in MOS structures. The experimental details, including the annealing apparatus, sample fabrication and irradiation, sample measurements, and data analysis will be described. Some suggestions concerning the possible mechanisms involved in the annealing of neutral traps, in particular, the recombination‐enhanced defect reactions, will be presented.Keywords
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