Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation
- 24 September 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (13) , 1340-1342
- https://doi.org/10.1063/1.103477
Abstract
The kinetics of solid phase epitaxy (SPE) have been measured in MeV ion-implanted amorphous Si layers up to 5 μm thick. Epitaxial crystallization in these layers occurs at a constant rate throughout the entire film, without loss of interface planarity or competition from random nucleation or twin formation. The activation energy for SPE in thick layers is found to be 2.70 eV, in excellent agreement with the value determined previously in much thinner films. The SPE kinetics are shown not to depend on the implant dose for doses up to 1000 times the threshold for amorphization. The presence of water vapor in the annealing ambient during SPE results in the indiffusion of hydrogen and a concomitant reduction of the SPE growth rate at distances as great as 2 μm from the surface. This effect may have important implications for the development of a microscopic model of the SPE process in silicon.Keywords
This publication has 13 references indexed in Scilit:
- Precision measurements of the effect of implanted boron on silicon solid phase epitaxial regrowthJournal of Materials Research, 1988
- Kinetics of solid phase crystallization in amorphous siliconMaterials Science Reports, 1988
- Influence of H on the recrystallization of amorphous Si layersNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Impurity-induced enhancement of the growth rate of amorphized silicon during solid-phase epitaxy: A free-carrier effectJournal of Applied Physics, 1986
- Controlled hydrogenation of amorphous silicon at low temperaturesApplied Physics Letters, 1979
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- A SIMS analysis of deuterium diffusion in hydrogenated amorphous siliconApplied Physics Letters, 1978
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- Electronic transport and state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972