Influence of H on the recrystallization of amorphous Si layers
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 462-465
- https://doi.org/10.1016/s0168-583x(87)80091-5
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Effect of pressure on the solid phase epitaxial regrowth rate of SiApplied Physics Letters, 1985
- Role of Electronic Processes in Epitaxial Recrystallization of Amorphous SemiconductorsPhysical Review Letters, 1983
- Some thermodynamic properties of amorphous SiNuclear Instruments and Methods in Physics Research, 1983
- Impurity and concentration dependence of growth rate during solid epitaxy of implanted SiApplied Physics A, 1982
- Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germaniumThin Solid Films, 1982
- Exodiffusion of hydrogen in amorphous siliconJournal of Non-Crystalline Solids, 1980
- Solid-state epitaxial growth of deposited Si filmsApplied Physics Letters, 1979
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977