Capacitance spectroscopy of a-Si:H
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 323-326
- https://doi.org/10.1016/0022-3093(85)90666-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Surface states in P- and B-doped amorphous hydrogenated siliconPhysical Review B, 1983
- Application of a new capacitance-voltage method to a-Si:HJournal of Non-Crystalline Solids, 1983
- Measurement of deep levels in hydrogenated amorphous silicon by transient voltage spectroscopyApplied Physics Letters, 1983
- Diffusion length of holes in a-Si:H by the surface photovoltage methodApplied Physics Letters, 1981
- Hall mobility for electrons in undoped a-Si:HApplied Physics Letters, 1980