Intrinsic current bistability in InAs/AlxGa1−xSb resonant tunneling devices
- 3 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (1) , 76-78
- https://doi.org/10.1063/1.110873
Abstract
We report the design and demonstration of a novel resonant tunneling device displaying bistability in operating current over a range of applied voltage. The device is based on a type II InAs/AlxGa1−xSb (0.4<xI‐V behavior under voltage‐controlled conditions. Room temperature operating currents in excess of 2.5×105 A/cm2 are observed, along with peak‐to‐valley voltage ratios up to 1.5.Keywords
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