Electronic and Structural Characterization of the Near Surface Layer and the Bulk in νc-Si:H Prepared with Hydrogen dilution

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Abstract
The near surface layer and the bulk of νc-Si:H prepared with hydrogen dilution are investigated by Raman, optical absorption, and total yield photoelectron spectroscopies. The results show that for low hydrogen dilution ratios, microcrystallites appear in the bulk while the growing surface layer remains amorphous, indicating that microcrystallite formation takes place primarily in the sub-surface layer. At high hydrogen dilution ratios, microcrystallites are detected at both the bulk and the near surface layer. The defect density and hydrogen bonding configurations at various hydrogen dilution levels are presented.