Native defects and impurities in GaN

This publication has 32 references indexed in Scilit:

• Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
  Journal of Applied Physics, 1994
• Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
  Applied Physics Letters, 1994
• GaN, AlN, and InN: A review
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
• Hole Compensation Mechanism of P-Type GaN Films
  Japanese Journal of Applied Physics, 1992
• III-V nitrides for electronic and optoelectronic applications
  Proceedings of the IEEE, 1991
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
  Japanese Journal of Applied Physics, 1989
• Electronic structures and doping of InN, ${\mathrm{In}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$N, and ${\mathrm{In}}_{\mathrm{x}}$${\mathrm{Al}}_{1\mathrm{-}\mathrm{x}}$N
  Physical Review B, 1989
• On the origin of free carriers in high‐conducting n‐GaN
  Crystal Research and Technology, 1983
• Electrical properties of n-type vapor-grown gallium nitride
  Journal of Physics and Chemistry of Solids, 1973
• THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
  Applied Physics Letters, 1969