Composition-selective photochemical etching of compound semiconductors
- 1 July 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (1) , 62-63
- https://doi.org/10.1063/1.96405
Abstract
Compound semiconductor materials differing only in the relative amounts of constituent atoms are very difficult to etch selectively using current chemical etching techniques. We have developed a photochemical etching process that solves this problem by utilizing the difference in band gap of GaAs1−xPx materials differing slightly in composition to produce a very high degree of etching selectivity between the materials. The concepts employed in this process have general applicability to other compound semiconductor material systems.Keywords
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