Method for determination of semiconductor parameters from infrared reflectance data
- 30 September 1970
- journal article
- Published by Elsevier in Optics Communications
- Vol. 2 (4) , 157-158
- https://doi.org/10.1016/0030-4018(70)90003-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Use of plasma edge reflection measurements in the study of semiconductorsJournal of Physics C: Solid State Physics, 1968
- Comparison of classical approximations to free carrier absorption in semiconductorsSolid-State Electronics, 1967
- Infrared Reflectivity of Heavily Doped Low-Mobility Semiconductors. I. GaAsJournal of Applied Physics, 1966
- Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared ReflectionPhysical Review B, 1964